Semiconductor device and method of forming the same

ABSTRACT

A semiconductor device includes a substrate, at least one semiconductor fin, and at least one epitaxy structure. The semiconductor fin is present on the substrate. The semiconductor fin has at least one recess thereon. The epitaxy structure is present in the recess of the semiconductor fin. The epitaxy structure includes a topmost portion, a first portion and a second portion arranged along a direction from the semiconductor fin to the substrate. The first portion has a germanium atomic percentage higher than a germanium atomic percentage of the topmost portion and a germanium atomic percentage of the second portion.

PRIORITY CLAIM AND CROSS-REFERENCE

This application is a continuation of U.S. patent application Ser. No.15/164,824, filed May 25, 2016, entitled “Semiconductor Device andMethod of Forming the Same,” which application claims priority to U.S.Provisional Application No. 62/218,901, filed Sep. 15, 2015, whichapplications are herein incorporated by reference.

BACKGROUND

In the race to improve transistor performance as well as reduce the sizeof transistors, transistors have been developed that the channel andsource/drain regions are located in a fin formed from the bulksubstrate. Such non-planar devices can be referred to as multiple-gatefinFETs. A multiple-gate finFET may have a gate electrode that straddlesacross a fin-like silicon body to form a channel region.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a perspective view of an exemplary semiconductor deviceaccording to some embodiments.

FIG. 2 is a cross-sectional view of the semiconductor device in FIG. 1taken along 2-2 line.

FIG. 3 is a germanium atomic percentage profile in accordance with someembodiments.

FIG. 4 is a boron concentration profile in accordance with someembodiments.

FIGS. 5A to 12A are cross-sectional views of a method of forming asemiconductor device at various stages in accordance with someembodiments taken along a line, such as the line parallel to alengthwise direction of the gate structure in FIG. 1.

FIGS. 5B to 12B are different cross-sectional views corresponding toFIG. 5A to 12A which is taken along a line, such as line 2 in FIG. 1.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the some embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Source and drain regions of a finFET may be formed on the semiconductorfin by epitaxy growth. Embodiments of the present disclosure providesome improved epitaxy source and drain regions. These embodiments arediscussed below in the context of forming the semiconductor devicehaving a single semiconductor fin or multiple fins on a bulk siliconsubstrate. One of ordinary skill in the art will realize thatembodiments of the present disclosure may be used with otherconfigurations.

FIG. 1 is a perspective view of an exemplary semiconductor deviceaccording to some embodiments. The semiconductor device includes asubstrate 110. In some embodiments, the substrate 110 includes a bulksilicon substrate. In some embodiments, the substrate 110 may be siliconin a crystalline structure. In some other embodiments, the substrate 110may include other elementary semiconductors, such as germanium, orinclude a compound semiconductor, such as silicon carbide, galliumarsenide, indium arsenide, or indium phosphide. In yet some otherembodiments, the substrate 110 includes a silicon-on-insulator (SOI)substrate. The SOI substrate may be fabricated using separation byimplantation of oxygen, wafer bonding, and/or other suitable methods.

The semiconductor device further includes shallow trench isolation (STI)structures 130 surrounding the semiconductor fin 120. The STI structures130 may include any suitable insulating material, such as silicon oxide.In some embodiments, the STI structure 130 has a thickness ranging from,for example, about 30 nm to about 60 nm.

The semiconductor device 100 further includes at least one gatestructure 140. The gate structure 140 is formed on a portion of thesemiconductor fin 120. The gate structure 140 includes a gate dielectriclayer 141 and a gate electrode layer 142. The gate dielectric layer 141is present between the gate electrode layer 144 and the substrate 110,and is formed on the semiconductor fin 120. The gate dielectric layer141, which prevents electron depletion, may include, for example, ahigh-k dielectric material such as metal oxides, metal nitrides, metalsilicates, transition metal-oxides, transition metal-nitrides,transition metal-silicates, oxynitrides of metals, metal aluminates,zirconium silicate, zirconium aluminate, or combinations thereof. Someembodiments may include hafnium oxide (HfO₂), hafnium silicon oxide(HfSiO), hafnium silicon oxynitride (HfSiON), hafnium tantalum oxide(HfTaO), hafnium titanium oxide (HfTiO), hafnium zirconium oxide(HfZrO), lanthanum oxide (LaO), zirconium oxide (ZrO), titanium oxide(TiO), tantalum oxide (Ta₂O₅), yttrium oxide (Y₂O₃), strontium titaniumoxide (SrTiO₃, STO), barium titanium oxide (BaTiO₃, BTO), bariumzirconium oxide (BaZrO), hafnium lanthanum oxide (HfLaO), lanthanumsilicon oxide (LaSiO), aluminum silicon oxide (AlSiO), aluminum oxide(Al₂O₃), silicon nitride (Si₃N₄), oxynitrides (SiON), and combinationsthereof. The gate dielectric layer 141 may have a multilayer structuresuch as one layer of silicon oxide (e.g., interfacial layer) and anotherlayer of high-k material.

The gate electrode layer 142 is formed over the substrate 110 to coverthe gate dielectric layer 141 and the portion of the semiconductor fin120 covered by the gate dielectric layer 141. In some embodiments, thegate electrode layer 142 includes a semiconductor material such aspolysilicon, amorphous silicon, or the like. The gate electrode layer142 may be deposited doped or undoped. For example, in some embodiments,the gate electrode layer 142 includes polysilicon deposited undoped bylow-pressure chemical vapor deposition (LPCVD). Once applied, thepolysilicon may be doped with, for example, phosphorus ions (or othern-type dopants) or boron (or other p-type dopants) based on the type ofthe semiconductor device. The polysilicon may also be deposited, forexample, by furnace deposition of an in-situ doped polysilicon.Alternatively, the gate electrode layer 142 may include a polysiliconmetal alloy or a metal gate including metals such as tungsten (W),nickel (Ni), aluminum (Al), tantalum (Ta), titanium (Ti), or anycombination thereof.

The semiconductor fin 120 includes a channel region (not shown) coveredand wrapped by the gate structure 140. The semiconductor fin 120 may bedoped to provide a suitable channel for an n-type finFET (NMOS device)or p-type finFET (PMOS device). The semiconductor fin 120 may be dopedusing processes such as, ion implantation, diffusion, annealing, and/orother suitable processes.

The semiconductor device further includes a pair of spacers 150. Thespacers 150 are respectively formed over the substrate 110 and adjacentto opposite sides of the gate structure 140. Portions of thesemiconductor fin 120 are covered by the spacers 150. In someembodiments, the spacer 150 may include silicon oxide, silicon nitride,silicon oxynitride, or other suitable material. The spacer 150 mayinclude a single layer or multilayer structure.

Reference is made to FIG. 2, which is a cross-sectional view taken alongline 2 in FIG. 1. The semiconductor fin 120 includes at least one recess121 between the spacers 150. The recess 121 is formed on the portions ofthe semiconductor fin 120 that are not covered by the spacers 150 andthe gate structure 140. More particularly, a portion of thesemiconductor fin 120 exposed both by the gate structure 140 and thespacers 150 is partially removed (or partially recessed) to form arecess 121 in semiconductor fin 120.

The semiconductor device further includes at least one epitaxy structure160. The epitaxy structure 160 is formed on the semiconductor fin 120.More particularly, the epitaxy structure 160 is formed in the recess 121of the semiconductor fin 120. In some embodiments, the semiconductor fin120 has a topmost surface 122. The epitaxy structure 160 extends belowthe topmost surface 122 toward the substrate 110. In some embodiments, aplurality of epitaxy structures 160 may be epitaxially grown on thesemiconductor fins 120 respectively. Because epitaxy growth includesvertical growth and horizontal growth, a portion of one epitaxystructure 160 grown from the semiconductor fin 120 eventually mergeswith a portion of the epitaxy structure 160 grown from the neighboringsemiconductor fin 120. As such, the epitaxy structures 160 formed ondifferent semiconductor fins 120 may be merged into a continuous epitaxystructure, which may benefit a source/drain to be formed thereon.

The epitaxy structure 160 may be formed by using one or more epitaxy orepitaxial (epi) processes, such that Si features, SiGe features, and/orother suitable features can be formed in a crystalline state on thesemiconductor fin 120. In some embodiments, a lattice constant of theepitaxy structure 160 is different from a lattice constant of thechannel of the semiconductor fin 120, so that the channel can bestrained or stressed by the epitaxy structure 160 to improve carriermobility of the semiconductor device and enhance the device performance.

The semiconductor device further includes an interlayer dielectric (ILD)layer 180. The ILD layer 180 is formed on the substrate 110 to cover theepitaxy structure 160. The ILD layer 180 may include silicon oxide,silicon nitride, silicon oxynitride, silicon carbide, a low-dielectricconstant dielectric material, or combinations thereof.

The semiconductor device further includes a source/drain contact 190.The source/drain contact 190 is formed through the ILD layer 180 andcontacts with a top surface 169 of the epitaxy structure 160. In someembodiments, the source/drain contact 190 includes W, Co, Cu, Al orother suitable conductive material. As shown in FIG. 1, when the epitaxystructures 160 formed on different semiconductor fins 120 are mergedinto a continuous epitaxy structure, the source/drain contact 190 can beformed on these epitaxy structures 160.

In some embodiments, the epitaxy structure 160 is a germanium-containingstructure. For example, the epitaxy structure 160 may include silicongermanium. The epitaxy structure 160 may be formed using chemical vapordeposition (CVD). The precursors may include silicon-containing gasesand germanium-containing gases, such as SiH₄ and GeH₄, respectively, andthe partial pressures of the silicon-containing gases andgermanium-containing gases are adjusted to modify the germanium atomicpercentage and the silicon atomic percentage. In some embodiments, theresulting epitaxy structure 160 includes a topmost portion PT, a firstportion P1 and a second portion P2. The top portion PT, the firstportion P1 and the second portion P2 are arranged along a direction fromthe semiconductor fin 120 to the substrate 110. The first portion P1 hasa germanium atomic percentage higher than a germanium atomic percentageof the topmost portion PT and a germanium atomic percentage of thesecond portion P2. In other words, both the topmost portion PT above thefirst portion P1 and the second portion P2 below the first portion P1contain less germanium than the first portion P1, which may benefit theresulting epitaxy structure 160 to have a top surface 169 in a suitablesize and shape, and may benefit the source/drain contact 190 formedthereon. In some embodiments, the ratio of the flow rate of thegermanium-containing gas, such as GeH₄, to the flow rate of thesilicon-containing gas, such as SiH₄, may be controlled or tuned to formthe foregoing germanium atomic percentage of the topmost portion PT, thefirst portion P1 and the second portion P2 during the epitaxy growth ofthe epitaxy structure 160. In some embodiments, the germanium atomicpercentage may be referred to as the germanium concentration.

In some embodiments, the epitaxy structure 160 includes a middle buriedlayer 161 between the first portion P1 and the second portion P2. Thegermanium atomic percentage of the middle buried layer 161 increasesalong a direction from the substrate 110 to the semiconductor fin 120.In other words, the germanium atomic percentage of the middle buriedlayer 161 increases along a direction from the second portion P2 to thefirst portion P1. This may benefit the top surface 169 of the epitaxystructure 160 to be formed in a suitable size and shape for benefitingformation of the source/drain contact 190. In some embodiments, themiddle buried layer 161 is a gradient germanium-containing layer, inwhich the germanium atomic percentage is increasingly graded upwardly.In some embodiments, the bottommost location of the middle buried layer161 (namely, the second portion P2) has a germanium atomic percentageranging from about 25% to about 55%, and the germanium atomic percentageof other location of the middle buried layer 161 above the bottommostlocation increases upwardly. In some embodiments, the ratio of the flowrate of the germanium-containing gas, such as GeH₄, to the flow rate ofthe silicon-containing gas, such as SiH₄, may be controlled or tuned toform the foregoing gradient germanium atomic percentage of the middleburied layer 161 during the epitaxy growth of the middle buried layer161.

In some embodiments, the epitaxy structure 160 further includes an upperburied layer 162. The upper buried layer 162 is located between themiddle buried layer 161 and the topmost portion PT. The upper buriedlayer 162 has a germanium atomic percentage decreasing along a directionfrom the substrate 110 to the semiconductor fin 120. In other words, thegermanium atomic percentage of the upper buried layer 162 decreasesalong a direction from the first portion P1 to the topmost portion PT.This may benefit formation of the topmost portion PT that contains lessgermanium than the middle buried layer 161. In some embodiments, theupper buried layer 162 is a gradient germanium-containing layer, inwhich the germanium atomic percentage is decreasingly graded upwardly.In some embodiments, the bottommost location of the upper buried layer162 (namely, the first portion P1) has a germanium atomic percentageranging from about 45% to about 55%, and the germanium atomic percentageof other location of the upper buried layer 162 above the bottommostlocation decreases upwardly. In some embodiments, the ratio of the flowrate of the germanium-containing gas, such as GeH₄, to the flow rate ofthe silicon-containing gas, such as SiH₄, may be controlled or tuned toform the foregoing gradient germanium atomic percentage of the upperburied layer 162 during the epitaxy growth of the upper buried layer162.

In some embodiments, the epitaxy structure 160 further includes atopmost layer 163. The topmost portion PT is located on a topmostsurface of the topmost layer 163 opposite to the underlying upper andmiddle buried layers 162 and 161. In other words, the upper buried layer162 is located between the topmost layer 163 and the middle buried layer161. The topmost layer 163 has a germanium atomic percentage lower thanthe germanium atomic percentage of the middle buried layer 161. Thegermanium atomic percentage of the topmost layer 163 at least partiallydecreases along the direction from the substrate 110 to thesemiconductor fin 120. In particular, the germanium atomic percentage ofat least an upper portion of the topmost layer 163 decreases upwardly,which may benefit formation of the topmost portion PT that contains lessgermanium than other underlying location of the topmost layer 163. Insome embodiments, the germanium atomic percentage of the topmost layer163 ranges from about 15% to about 25%. In some embodiments, a maximalgermanium atomic percentage of the topmost layer 163 is in a rangebetween a minimal germanium atomic percentage and a maximal germaniumatomic percentage of the upper buried layer 162. In other words, a lowerportion of the topmost layer 163 immediately adjacent to the upperburied layer 162 may has a germanium atomic percentage that increasesalong the direction from the substrate 110 to the semiconductor fin 120to reach the maximal germanium atomic percentage of the topmost layer163, while the germanium atomic percentage of the upper portion of thetopmost layer 163 decreases along the same direction to reach theminimal germanium atomic percentage of the topmost layer 163. In someembodiments, the ratio of the flow rate of the germanium-containing gas,such as GeH₄, to the flow rate of the silicon-containing gas, such asSiH₄, may be controlled or tuned to form the foregoing germanium atomicpercentage profile of the topmost layer 163 during the epitaxy growth ofthe topmost layer 163.

In some embodiments, the epitaxy structure 160 further includes a lowerburied layer 164. The lower buried layer 164 underlies the secondportion P2. The germanium atomic percentage of the second portion P2 isin a range between a maximal germanium atomic percentage and a minimalgermanium atomic percentage of the lower buried layer 164. This maybenefit the top surface 169 of the epitaxy structure 160 to be formed ina suitable size and shape for benefiting formation of the source/draincontact 190. In other words, the germanium atomic percentage of thelower buried layer 164 is spatially various, and the maximal germaniumatomic percentage thereof is higher than the germanium atomic percentageof the second portion P2, and the minimal germanium atomic percentage ofthe lower buried layer 164 is lower than the germanium atomic percentageof the second portion P2. In some embodiments, the germanium atomicpercentage of the lower buried layer 164 ranges from about 25% to about35%. In some embodiments, the ratio of the flow rate of thegermanium-containing gas, such as GeH₄, to the flow rate of thesilicon-containing gas, such as SiH₄, may be controlled or tuned to formthe foregoing germanium atomic percentage profile of the lower buriedlayer 164 during the epitaxy growth of the lower buried layer 164.

In some embodiments, the semiconductor device further includes a dopedlayer 170. The doped layer 170 underlies the epitaxy structure 160. Inother words, the doped layer 170 is located below the epitaxy structure160. The epitaxy structure 160 is conformally formed on the doped layer170. The doped layer 170 may be formed by doping a suitable p-typeimpurity, such as boron, into the semiconductor fin 120 through thesurface of the recess 121. The doped layer 170 underlies the lowerburied layer 164. The doped layer 170 has a germanium atomic percentageincreasing along the direction from the substrate 110 to thesemiconductor fin 120. In other words, the germanium atomic percentageof the doped layer 170 decreases downwardly. This may benefit the topsurface 169 of the epitaxy structure 160 to be formed in a suitable sizeand shape for benefiting formation of the source/drain contact 190. Insome embodiments, the ratio of the flow rate of the germanium-containinggas, such as GeH₄, to the flow rate of the silicon-containing gas, suchas SiH₄, may be controlled or tuned to form the foregoing germaniumatomic percentage profile of the doped layer 170 during the formation ofthe doped layer 170.

FIG. 3 is a germanium atomic percentage profile in accordance with someembodiments. In FIG. 3, a profile L1 is the germanium atomic percentageprofile of the doped layer 170; a profile L2 is the germanium atomicpercentage profile of the lower buried layer 164; a profile L3 is thegermanium atomic percentage profile of the middle buried layer 161; aprofile L4 is the germanium atomic percentage profile of the upperburied layer 162; and a profile L5 is the germanium atomic percentageprofile of the topmost layer 163. By such an epitaxy structure 160 anddoped layer 170 having such germanium atomic percentage profiles L1-L5,the top surface 169 of the epitaxy structure 160 can be formed in asuitable size and shape to benefit the source/drain contact 190 formedthereon. The ratio of the flow rate of the germanium-containing gas,such as GeH₄, to the flow rate of the silicon-containing gas, such asSiH₄, may be controlled or tuned to form the germanium atomic percentageprofiles L1-L5 during the formation of the epitaxy structure 160 anddoped layer 170.

The epitaxy structure 160 is doped with a suitable impurity to serve asa source region or a drain region of the semiconductor device. In someembodiments, the epitaxy structure 160 is doped with a p-type impurity,such as boron, and the boron concentration of the epitaxy structure 160is spatially various. In other words, the boron concentration of theepitaxy structure 160 is unevenly distributed. In some embodiments, theconcentration of the p-type impurity is correlated to the dose of thep-type dopant used in the implantation process, and therefore, the doseof the boron dopant may be controlled or tuned to form the spatiallyvarious boron concentration of the epitaxy structure 160. Theboron-doped epitaxy structure 160 may serve as a p-type source/drainregion. Therefore, the semiconductor device may serve as a p-typefinFET.

In some embodiments, the boron concentration of the epitaxy structure160 substantially increases from the doped layer 170 to the topmostlayer 163. In other words, a boron concentration of the doped layer 170is lower than a boron concentration of the lower buried layer 164. Theboron concentration of the lower buried layer 164 is lower than a boronconcentration of the middle buried layer 161. The boron concentration ofthe middle buried layer 161 is lower than a boron concentration of theupper buried layer 162. The boron concentration of the upper buriedlayer 162 is lower than a boron concentration of the topmost layer 163.In some embodiments, the boron concentration of the doped layer 170oscillates along a direction from the substrate 110 to the semiconductorfin 120. For example, reference is made to FIG. 4, which is a boronconcentration profile in accordance with some embodiments. In FIG. 4, aprofile L6 is the boron concentration profile of the doped layer 170; aprofile L7 is the boron concentration profile of the lower buried layer164; a profile L8 is the boron concentration profile of the middleburied layer 161; a profile L9 is the boron concentration profile of theupper buried layer 162; and a profile L10 is the boron concentrationprofile of the topmost layer 163. By such a boron-doped epitaxystructure 160 and boron-doped layer 170 having such boron concentrationprofiles L6-L10, the top surface 169 of the epitaxy structure 160 can beformed in a suitable size and shape to benefit the source/drain contact190 formed thereon. The dose of the boron dopant used in theimplantation process may be controlled or tuned to implement the boronconcentration profiles L6 to L10. In some embodiments, the boronconcentration of the doped layer 170 ranges from about 1e17 cm⁻³ toabout 1e21 cm⁻³, and the boron concentration of the lower buried layer164 ranges from about 3e20 cm⁻³ to about 5e20 cm⁻³, and the boronconcentration of the middle buried layer 161 ranges from about 6e20 cm⁻³to about 10e20 cm⁻³, and the boron concentration of the upper buriedlayer 162 ranges from about 6e20 cm⁻³ to about 10e20 cm⁻³, and the boronconcentration of the topmost layer 163 ranges from about 8e20 cm⁻³ toabout 11e20 cm⁻³.

In some embodiments, the resulting boron-doped epitaxy structure 160 hasa depth ranging from about 45 nm to about 65 nm. The top surface 169 ofthe resulting boron-doped epitaxy structure 160 may be higher than thetopmost surface 122 of the semiconductor fin 120, and the verticaldistance from the top surface 169 to the topmost surface 122 may be 5nm. In other words, a portion of the epitaxy structure 160 is formed inexcess of the recess 121, which may benefit formation of thesource/drain contact 190. In some embodiments, the topmost layer 163 mayhave a thickness ranging from about 2.7 nm to about 7.5 nm, and amaximal width of other portion of the epitaxy structure 160 except thetopmost layer 163 may range from about 35 nm to about 55 nm. Thismaximal width is measured along an arrangement direction of the epitaxystructures 160, as shown in FIG. 1.

FIGS. 5A to 12A are cross-sectional views of a method of forming asemiconductor device at various stages in accordance with someembodiments taken along a line, such as the line parallel to alengthwise direction of the gate structure 140 in FIG. 1. FIGS. 5B to12B are different cross-sectional views corresponding to FIG. 5A to 12Awhich is taken along a line, such as line 2 in FIG. 1.

Reference is made to FIGS. 5A and 5B. A semiconductor fin 220 is formedin the substrate 210, and a portion of the semiconductor fin 220 isprotruded from the substrate 210. The semiconductor fin 220 may beformed by, for example, patterning and etching the substrate 210 usingphotolithography techniques. In some embodiments, a layer of photoresistmaterial (not shown) is deposited over the substrate 210. The layer ofphotoresist material is irradiated (exposed) in accordance with adesired pattern (the semiconductor fin 220 in this case) and developedto remove a portion of the photoresist material. The remainingphotoresist material protects the underlying material from subsequentprocessing steps, such as etching. It should be noted that other masks,such as an oxide or silicon nitride mask, may also be used in theetching process.

In FIGS. 5A and 5B, a plurality of STI structures 230 are formed on thesubstrate 210. The STI structures 230 may be formed by chemical vapordeposition (CVD) techniques using tetra-ethyl-ortho-silicate (TEOS) andoxygen as a precursor. In some other embodiments, the STI structures 230may be formed by implanting ions, such as oxygen, nitrogen, carbon, orthe like, into the substrate 210. In yet some other embodiments, the STIstructures 230 are insulator layers of a SOI wafer.

Reference is made to FIGS. 6A and 6B. Dummy gate structures 240 areformed on portions of the semiconductor fin 220 at an interval andexpose another portion of the semiconductor fin 220. The dummy gatestructures 240 include polysilicon, and they can be formed by adeposition process, such as a CVD process.

Reference is made to FIGS. 7A and 7B. A dielectric layer 250 isconformally formed over the semiconductor fin 220 and the dummy gatestructures 240. In some embodiments, the dielectric layer 250 mayinclude silicon oxide, silicon nitride, silicon oxy-nitride, or othersuitable material. The dielectric layer 250 may include a single layeror multilayer structure. The dielectric layer 250 may be formed by adeposition process, such as an atomic layer deposition (ALD) process, aCVD process, a PVD process or a sputter deposition process or othersuitable techniques.

Reference is made to FIGS. 8A and 8B. A removal process is performed toremove portions of the dielectric layer 250 and portions of theunderlying semiconductor fins 220, so that portions of the semiconductorfin 220 is exposed. This removal process may form an exposed recess 221on each semiconductor fin 220, as shown FIG. 8B. Some remaining portionsof the dielectric layer 250 serve as a pair of spacers 252 located ontwo opposite sides of the dummy gate structure 240, as shown in FIG. 8B.In some embodiments, the spacers 252 may be used to offset subsequentlyformed epitaxy structure formed in the recess 221. The spacers 252 mayfurther be used for designing or modifying the profile of the epitaxystructure.

The removal process may be a dry etching process, a wet etching process,or combination dry and wet etching process. Removal may include alithography process to facilitate the etching process. The lithographyprocess may include photoresist coating (e.g., spin-on coating), softbaking, mask aligning, exposure, post-exposure baking, developing thephotoresist, rinsing, drying (e.g., hard baking), other suitableprocesses, or combinations thereof. Alternatively, the lithographyprocess is implemented or replaced by other methods, such as masklessphotolithography, electron-beam writing, and ion-beam writing. In yetsome other embodiments, the lithography process could implementnanoimprint technology. In some embodiments, a pre-cleaning process maybe performed to clean the recess 221 with HF or other suitable solution,which benefit the subsequent epitaxy growth.

Reference is made to FIGS. 9A and 9B. A doped layer 260 may be formed inthe recess 221 of the semiconductor fin 220. The doped layer 260 isdoped with a suitable p-type impurity, such as boron. For example, thedoped layer 260 may be formed by doping boron into the semiconductor fin220 through the exposed surface of the recess 221. The doped layer 260may be formed by an in-situ doping process. The doping process mayinclude an implantation process to implant a p-type impurity, such asboron, into the semiconductor fin 220 through the exposed surface. Thedoped layer 260 may have a germanium atomic percentage profile L1 asshown in FIG. 4. This germanium atomic percentage profile can beachieved by, for example, controlling the ratio of the flow rate of thegermanium-containing gas, such as GeH₄, to the flow rate of thesilicon-containing gas, such as SiH₄. The doped layer 260 may have aboron concentration profile L6 as shown in FIG. 5. This boronconcentration profile can be achieved by, for example, controlling thedose of the boron dopant used in the implantation process.

Reference is made to FIGS. 10A and 10B. A plurality of epitaxystructures 270 are respectively formed in the recesses 221 of thesemiconductor fins 220 and over the doped layers 260. The epitaxystructures 270 may be formed using one or more epitaxy or epitaxial(epi) processes, such that Si features, SiGe features, and/or othersuitable features can be formed in a crystalline state on thesemiconductor fins 220. In some embodiments, the epitaxy processesinclude CVD deposition techniques (e.g., vapor-phase epitaxy (VPE)and/or ultra-high vacuum CVD (UHV-CVD)), molecular beam epitaxy, and/orother suitable processes. The epitaxy process may use gaseous and/orliquid precursors, which interact with the composition of thesemiconductor fins 220 (e.g., silicon).

The epitaxy structures 270 are germanium-containing structures. Forexample, the epitaxy structures 270 may include silicon germanium. Theepitaxy structures 270 may be formed using chemical vapor deposition(CVD). The precursors may include silicon-containing gases andgermanium-containing gases, such as SiH₄ and GeH₄, respectively, and thepartial pressures of the silicon-containing gases andgermanium-containing gases are adjusted to modify the germanium atomicpercentage and the silicon atomic percentage. In particular, the ratioof the flow rate of the germanium-containing gas, such as GeH₄, to theflow rate of the silicon-containing gas, such as SiH₄, may be controlledor tuned to form the germanium atomic percentage profiles L2-5 as shownin FIG. 4 during the epitaxy growth of the epitaxy structures 270.Because epitaxial growth includes vertical growth and horizontal growth,a portion of one epitaxy structure 270 grown from the semiconductor fin220 eventually merges with a portion of the epitaxy structure 270 grownfrom the neighboring semiconductor fin 220, in some embodiments. Assuch, the epitaxy structures 270 formed on different semiconductor fins220 may be merged into a continuous epitaxy structure, which may benefita source/drain contact to be formed thereon.

A doping process is performed to dope a suitable impurity into theepitaxy structure 270 to serve as a source region or a drain region ofthe semiconductor device. For example, the epitaxy structure 270 may bein-situ doped. The doping species include p-type dopants, such as boronor BF₂; n-type dopants, such as phosphorus or arsenic; and/or othersuitable dopants including combinations thereof. If the epitaxystructure 270 is not in-situ doped, a second implantation process (i.e.,a junction implant process) is performed to dope the epitaxy structure270. The implantation may be performed to implant dopants into theepitaxy structure 270. One or more annealing processes may be performedto activate the epitaxy structure 270. The annealing processes includerapid thermal annealing (RTA) and/or laser annealing processes.

In some embodiments, a doping process is performed to unevenly dopeboron dopants into the epitaxy structures 270, so that the boronconcentration of the resulting epitaxy structures 270 is spatiallyvarious or unevenly distributed. In particular, the epitaxy structures270 may have the boron concentration profiles L7-10 as shown in FIG. 5.For example, the dose of the boron dopants may be controlled or tuned toform the boron concentration profiles L7-10 as shown in FIG. 5 duringthe implantation process performed to the epitaxy structures 270. Thismay benefit top surfaces 271 of the epitaxy structures 270 formed in asuitable size and shape, so as to benefit the source/drain contactformed thereon.

Reference is made to FIGS. 11A and 11B. A gate last process (orreplacement gate process) is performed to replace the dummy gatestructures 240 by the gate structures 280. The gate structures 280 mayinclude a gate dielectric layer 281 and a gate electrode layer 282. Thegate electrode layer 282 may include a work function metal. Providingthe gate structures 280 later in the process can avoid problems of thestability of the work function metal during formation of thesource/drain epitaxy structure 270. The gate last process may includeremoving the dummy gate structures 240 by an etching process, formingthe gate dielectric layer 281 by a deposition process, forming a gateelectrode layer 282 by a deposition process, forming a dielectriccapping layer on the gate electrode layer 282 by a deposition process,and removing undesired portions of the dielectric capping layer by a CMPprocess.

Before removing the dummy gate structures 240, an interlayer dielectric(ILD) layer 290 is formed over the epitaxy structures 270. The ILD layer290 includes silicon oxide, silicon nitride, silicon oxynitride, siliconcarbide, low-dielectric constant dielectric material or a combinationthereof. The ILD layer 290 can be formed by a deposition process, suchas a CVD process.

Reference is made to FIGS. 12A and 12B. A source/drain contact 300 isformed through the ILD layer 290 and contacts with the top surfaces 271the epitaxy structures 270. Formation of the source/drain contact 300may include forming contact holes by an etching process to etch throughthe ILD layer 290 down to the epitaxy structures 270 and depositingmetal in the contact holes by a deposition process, such as a CVDprocess, to form the source/drain contacts 300.

In some embodiments, since the germanium atomic percentage profile andthe p-type impurity concentration profile make the top surfaces of theepitaxy structures formed in a suitable size and shape, the source/draincontacts can be formed on the top surfaces more easily, and the contactresistance can be reduced as well.

According to some embodiments, a semiconductor device includes asubstrate, at least one semiconductor fin, and at least one epitaxystructure. The semiconductor fin is present on the substrate. Thesemiconductor fin has at least one recess thereon. The epitaxy structureis present in the recess of the semiconductor fin. The epitaxy structureincludes a topmost portion, a first portion and a second portionarranged along a direction from the semiconductor fin to the substrate.The first portion has a germanium atomic percentage higher than agermanium atomic percentage of the topmost portion and a germaniumatomic percentage of the second portion.

According to some embodiments, a semiconductor device includes asubstrate, at least one semiconductor fin, and at least one epitaxystructure. The semiconductor fin has at least one recess thereon. Theepitaxy structure is present in the recess of the semiconductor fin. Theepitaxy structure includes a topmost layer and a first gradientgermanium-containing layer below the topmost layer. The first gradientgermanium-containing layer has a germanium atomic percentage higher thana germanium atomic percentage of the topmost layer and increasing alonga direction from the substrate to the semiconductor fin.

According to some embodiments, a method of forming a semiconductordevice includes forming at least one semiconductor fin on a substrate,removing at least one portion of the semiconductor fin to form at leastone recess, and forming at least one epitaxy structure in the recess ofthe semiconductor fin, wherein the epitaxy structure includes a topmostportion, a first portion and a second portion arranged along a directionfrom the semiconductor fin to the substrate, wherein a germaniumconcentration of the first portion is higher than a germaniumconcentration of the topmost portion and a germanium concentration ofthe second portion.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A semiconductor device, comprising: asemiconductor fin present on a substrate, the semiconductor fincomprising a first material; and a gate structure over the semiconductorfin; a doped layer within the semiconductor fin; and a second materialdifferent from the first material embedded within the semiconductor fin,wherein the second material comprises a first portion, a second portion,and a third portion extending in a direction downwards from a surface ofthe semiconductor fin towards the substrate, the second portion betweenthe first portion and the third portion, the second portion having agermanium concentration gradient opposite the first portion and thethird portion, the third portion having an increasing germaniumconcentration gradient.
 2. The semiconductor device of claim 1, whereinthe doped layer comprises a p-type impurity.
 3. The semiconductor deviceof claim 1, further comprising an impurity distributed through thesecond material.
 4. The semiconductor device of claim 3, wherein theimpurity is unevenly distributed.
 5. The semiconductor device of claim3, wherein the impurity oscillates along a first direction.
 6. Thesemiconductor device of claim 5, wherein the first direction is from thesubstrate to the semiconductor fin.
 7. The semiconductor device of claim3, wherein the impurity is boron.
 8. A semiconductor device, comprising:a semiconductor fin over a substrate; and an embedded material withinthe semiconductor fin, wherein the embedded material has a roundedsurface in contact with the substrate and also has a germaniumconcentration that increases a first time, decreases a first time afterthe increasing the first time, and increases a second time after thedecreasing the first time as a distance from the substrate increases. 9.The semiconductor device of claim 8, wherein the germanium concentrationincreases the first time from between about 25%-atomic and about55%-atomic.
 10. The semiconductor device of claim 8, wherein thegermanium concentration increases the second time from between about45%-atomic and about 55%-atomic.
 11. The semiconductor device of claim8, further comprising a doped layer between the embedded material andthe substrate.
 12. The semiconductor device of claim 11, furthercomprising a first dopant within the doped layer and the embeddedmaterial, wherein the doped layer has an uneven distribution of dopants.13. The semiconductor device of claim 12, wherein the unevendistribution of dopants oscillates in a first direction.
 14. Thesemiconductor device of claim 13, wherein the first direction is fromthe substrate to the semiconductor fin.
 15. A semiconductor devicecomprising: a first portion of a first material within a recess of asemiconductor fin, wherein the first portion has an increasingconcentration of germanium as the first portion extends from thesemiconductor fin; a second portion of the first material within therecess, wherein the second portion has a decreasing concentration ofgermanium as the second portion extends from the semiconductor fin; anda third portion of the first material within the recess, wherein thethird portion has an increasing concentration of germanium as the thirdportion extends from the semiconductor fin.
 16. The semiconductor deviceof claim 15, wherein the germanium concentration increases within thefirst portion from about 25%-atomic to about 55%-atomic.
 17. Thesemiconductor device of claim 15, wherein the germanium concentrationincreases within the third portion from about 45%-atomic to about55%-atomic.
 18. The semiconductor device of claim 15, further comprisinga doped layer within the recess between the semiconductor fin and thefirst portion.
 19. The semiconductor device of claim 18, wherein thedoped layer comprises boron.
 20. The semiconductor device of claim 15,wherein the doped layer comprises a p-type impurity.